Proceedings of the E-MRS Conference, Symposium G. Substrates of Wide Bandgap MaterialsFORNARI, Roberto; ROJO, Juan Carlos; YAKIMOVA, Rositza et al.Journal of crystal growth. 2008, Vol 310, Num 5, issn 0022-0248, 150 p.Conference Proceedings

Status of hydrothermal growth of bulk ZnO : Latest issues and advantagesDEM'YANETS, L. N; LYUTIN, V. I.Journal of crystal growth. 2008, Vol 310, Num 5, pp 993-999, issn 0022-0248, 7 p.Conference Paper

Crystal growth of GaN on (0001) face by HVPE : Ab initio simulationsKEMPISTY, Pawel; KRUKOWSKI, Stanislaw.Journal of crystal growth. 2008, Vol 310, Num 5, pp 900-905, issn 0022-0248, 6 p.Conference Paper

Lattice parameters of bulk GaN fabricated by halide vapor phase epitaxyDARAKCHIEVA, V; MONEMAR, B; USUI, A et al.Journal of crystal growth. 2008, Vol 310, Num 5, pp 959-965, issn 0022-0248, 7 p.Conference Paper

Photoluminescence from (0001) GaN grown by the acidic ammonothermal techniqueFUJII, Katsushi; FUJIMOTO, Gakuyo; GOTO, Takenari et al.Journal of crystal growth. 2008, Vol 310, Num 5, pp 896-899, issn 0022-0248, 4 p.Conference Paper

The roles of low-temperature buffer layer for thick GaN growth on sapphireLEE, H. J; LEE, S. W; GOTO, H et al.Journal of crystal growth. 2008, Vol 310, Num 5, pp 920-923, issn 0022-0248, 4 p.Conference Paper

Cathodoluminescence study of ZnO wafers cut from hydrothermal crystalsMASS, J; AVELLA, M; JIMENEZ, J et al.Journal of crystal growth. 2008, Vol 310, Num 5, pp 1000-1005, issn 0022-0248, 6 p.Conference Paper

Modeling, optimization, and growth of GaN in a vertical halide vapor-phase epitaxy bulk reactorHEMMINGSSON, C; POZINA, G; HEUKEN, M et al.Journal of crystal growth. 2008, Vol 310, Num 5, pp 906-910, issn 0022-0248, 5 p.Conference Paper

Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structuresCORDIER, Y; AZIZE, M; BARON, N et al.Journal of crystal growth. 2008, Vol 310, Num 5, pp 948-954, issn 0022-0248, 7 p.Conference Paper

Characterization of stacking faults in thick 3C-SiC crystals using high-resolution diffuse X-ray scatteringBOULLE, A; CHAUSSENDE, D; CONCHON, F et al.Journal of crystal growth. 2008, Vol 310, Num 5, pp 982-987, issn 0022-0248, 6 p.Conference Paper

Polytype stability and defects in differently doped bulk SiCSCHMITT, Erwin; STRAUBINGER, Thomas; RASP, Michael et al.Journal of crystal growth. 2008, Vol 310, Num 5, pp 966-970, issn 0022-0248, 5 p.Conference Paper

Prospects for 3C-SiC bulk crystal growthCHAUSSENDE, D; MERCIER, F; JUILLAGUET, S et al.Journal of crystal growth. 2008, Vol 310, Num 5, pp 976-981, issn 0022-0248, 6 p.Conference Paper

Status and perspectives of the ammonothermal growth of GaN substratesHASHIMOTO, Tadao; FENG WU; SAITO, Makoto et al.Journal of crystal growth. 2008, Vol 310, Num 5, pp 876-880, issn 0022-0248, 5 p.Conference Paper

The large-sized diamond single-crystal synthesis by hot filament CVDYAMAZAKI, Ko; FURUICHI, Kazuyuki; TSUMURA, Iori et al.Journal of crystal growth. 2008, Vol 310, Num 5, pp 1019-1022, issn 0022-0248, 4 p.Conference Paper

Common point defects in as-grown ZnO substrates studied by optical detection of magnetic resonanceSON, N. T; IVANOV, I. G; JANZEN, E et al.Journal of crystal growth. 2008, Vol 310, Num 5, pp 1006-1009, issn 0022-0248, 4 p.Conference Paper

Determination of dislocation density in MOVPE grown GaN layers using KOH defect etchingWELLMANN, Peter J; SAKWE, Sakwe A; OEHLSCHLÄGER, Felix et al.Journal of crystal growth. 2008, Vol 310, Num 5, pp 955-958, issn 0022-0248, 4 p.Conference Paper

GaN ceramics obtained by fusing of nanocrystalline GaN powder at high pressures and temperatures as substrate for growth of GaN epilayersPODHORODECKI, A; NYK, M; KUDRAWIEC, R et al.Journal of crystal growth. 2008, Vol 310, Num 5, pp 940-943, issn 0022-0248, 4 p.Conference Paper

Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substratesOUGAZZADEN, A; ROGERS, D. J; GARRY, G et al.Journal of crystal growth. 2008, Vol 310, Num 5, pp 944-947, issn 0022-0248, 4 p.Conference Paper

Structural and surface characterization of large diameter, crystalline AlN substrates for device fabricationSCHUJMAN, Sandra B; SCHOWALTER, Leo J; BONDOKOV, Robert T et al.Journal of crystal growth. 2008, Vol 310, Num 5, pp 887-890, issn 0022-0248, 4 p.Conference Paper